A new light-responsive resistive random-access memory device containing hydrogen-bonded complexes

In the search to obtain new and more efficient components of memory devices, we report photochromic, dielectric electrochemical response a light-responsive organic compound, its performance under electrical fields. The so-called N(1)-[12-(4-(4?-isobutyloxyphenyldiazo)phenoxy)dodecyloxy)]thymine, tAZOi, molecule contains one azobenzene group, which provides with photochromic character, terminal thymine capable form hydrogen bonds assemble supramolecular dimers, (tAZOi)2. We have calculated optical absorption coefficient, extinction coefficient refractive index obeys single oscillator Wemple–DiDomenico model. An ITO/tAZOi/Al device has been prepared presents two switchable conductance states preservation performance. mechanism linked resistive random-access (RRAM) evaluated by molecular modelling is controlled p-type conduction, possibly involving hydrogen-bonding. Upon UV irradiation at ? 365 nm, tAZOi displays an increase in complex permittivity driven trans-to-cis (E-to-Z) isomerisation groups. Molecular simulations suggest that conductivity can be enhanced (and controlled) light exposure through formation activated Z isomers could transfer charge other neighbouring molecules, resulting photo-electric responsive devices.